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| TC2591 REV4_20070507 1 W Flange Ceramic Packaged PHEMT GaAs Power FETs FEATURES * * * * * * * * * * 1 W Typical Output Power at 6 GHz 12 dB Typical Linear Power Gain at 6 GHz High Linearity: IP3 = 40 dBm Typical at 6 GHz High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz Suitable for High Reliability Application Breakdown Voltage: BVDGO 15 V Lg = 0.35 m, Wg = 2.4 mm Tight Vp ranges control High RF input power handling capability 100 % DC Tested Flange Ceramic Package PHOTO ENLARGEMENT * DESCRIPTION The TC2591 is packaged with the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for commercial and military high performance power applications. ELECTRICAL SPECIFICATIONS (TA=25 C) Symbol P1dB GL IP3 PAE IDSS gm VP BVDGO Rth CONDITIONS Output Power at 1dB Gain Compression Point , f = 6GHz VDS = 8 V, IDS = 240 mA Linear Power Gain, f = 6GHz VDS = 8 V, IDS = 240 mA Intercept Point of the 3rd-order Intermodulation, f = 6GHz VDS = 8 V, IDS = 240 mA, *PSCL = 17 dBm Power Added Efficiency at 1dB Compression Power, f = 6GHz Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 4.8 mA Drain-Gate Breakdown Voltage at IDGO =1.2 mA Thermal Resistance 15 MIN 29.5 11 TYP MAX UNIT 30 12 40 43 600 400 -1.7** 18 18 dBm dB dBm % mA mS Volts Volts C/W Note: * PSCL: Output Power of Single Carrier Level. ** For the tight control of the pinch-off voltage range, we divide TC2591 into 3 model numbers to fit customer design requirement (1)TC2591P1519 : Vp = -1.5V to -1.9V (2)TC2591P1620 : Vp = -1.6V to -2.0V (3)TC2591P1721 : Vp = -1.7V to -2.1V If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P1/3 TC2591 REV4_20070507 ABSOLUTE MAXIMUM RATINGS (TA=25 C) Symbol VDS VGS IDS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature Rating 12 V -5 V IDSS 28 dBm 3.8 W 175 C - 65 C to +175 C RECOMMANDED OPERATING CONDITION Symbol VDS ID Parameter Drain to Source Voltage Drain Current Rating 8V 240 mA HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. TYPICAL SCATTERING PARAMETERS (TA=25 C) VDS = 8 V, IDS = 240 mA FREQUENCY (GHz) 2 3 4 5 6 7 8 9 S11 MAG 0.9111 0.8964 0.8794 0.8578 0.8360 0.8306 0.8581 0.9001 ANG -167.09 166.15 141.85 114.38 79.47 34.88 -14.11 -56.65 MAG 3.8048 2.8222 2.3866 2.1913 2.0878 1.9288 1.5922 1.1456 S21 ANG 68.95 42.16 16.06 -12.25 -44.97 -83.30 -125.20 -165.31 MAG 0.0337 0.0378 0.0429 0.0497 0.0575 0.0627 0.0600 0.0493 S12 ANG -10.27 -31.72 -52.55 -75.68 -103.32 -136.68 -173.75 150.84 MAG 0.4441 0.4297 0.3963 0.3453 0.2799 0.2361 0.3061 0.4635 S22 ANG 170.74 157.73 143.48 124.99 96.28 45.65 -16.20 -58.84 OUTLINE DIMENSIONS (Unit: mm) Source Source Drain TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P2/3 TC2591 REV4_20070507 NONLINEAR MODEL Cgd Rd G Lpkg3 Lpkg2 Lpkg1 Lg Rg FET Cpkg2 Cpkg1 Ri Cgs Rs Ls Lpkg4 S Cds Rds Crf Cpkg1 Cpkg2 Ld Lpkg1 Lpkg2 Lpkg3 D TOM2 MODEL PARAMETERS VTO ALPHA BETA GAMMA DELTA Q NG ND TAU RG RD RS IS N VBI VDELTA VMAX -2 V 4.54 0.399 0.0084 0.003 1.055 0 0.01 3.9 ps 0.65 Ohm 0.675 Ohm 0.475 Ohm 1E-14 mA 1 0.68 V 0.2 V 0.5 V CGD CGS CDS VBR TNOM LS LG LD Rds Ri Crf Lpkg1 Lpkg2 Lpkg3 Lpkg4 Cpkg1 Cpkg2 0.22 pF 4.04 pF 0.62 pF 15 V 27 C 0.009 nH 0.0475 nH 0.032 nH 10.29 Ohm 0.0375 Ohm 1E-7 PF 0.1 nH 0.16 nH 0.07 nH 0.032 nH 0.42 PF 0.26 PF MODEL RANGE Frequency: 0.5 to 10 GHz Bias: VDS = 1V to 8V, ID = 100mA to 600mA IDS = 600mA at VGS = 0V, VDS = 2V TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P3/3 |
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